UHF linear push-pull power transistor

DESCRIPTION NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps. FEATURES • Double stage internal input and output matching networks for an optimum wideband

文件：89.2 Kbytes 页数：12 Pages

PHI

PHI

UHF linear push-pull power transistor

DESCRIPTION\nNPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps.FEATURES\n• Double stage internal input and output matching networks for an optimum wideband capability • Double stage internal input and output matching networks for an optimum wideband capability and high gain\n• Polysilicon emitter ballasting resistors for an optimum temperature profile\n• Gold metallization ensures excellent reliability.;

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SINGLE DIGIT LED DISPLAYS

文件：260.14 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

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SINGLE DIGIT LED DISPLAYS

文件：260.14 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Quadruple ESD transient voltage suppressor

文件：149.06 Kbytes 页数：10 Pages

PHI

PHI