Power LDMOS transistor

Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent reliability  Wideband  High linearity  For RoHS compliance see the product details on the Ampleon website

文件：1.94065 Mbytes 页数：20 Pages

AMPLEON

安谱隆

Power LDMOS transistor

Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent reliability  Wideband  High linearity  For RoHS compliance see the product details on the Ampleon website

文件：1.94065 Mbytes 页数：20 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description This 13.6 V 55 W device is designed for land mobile radio (LMR) applications supporting the frequency range from HF up to 520 MHz. Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent re

文件：1.94028 Mbytes 页数：20 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description This 13.6 V 55 W device is designed for land mobile radio (LMR) applications supporting the frequency range from HF up to 520 MHz. Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent re

文件：1.94028 Mbytes 页数：20 Pages

AMPLEON

安谱隆

BLP6060A

BLP6060A

文件：76.24 Kbytes 页数：2 Pages

BELLING

上海贝岭

BLP7272

BLP7272

文件：75.91 Kbytes 页数：2 Pages

BELLING

上海贝岭

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Power LDMOS transistor

General description 20 W plastic LDMOS power transistor for base station applications at frequencies from 100 MHz to 2700 MHz. Features and benefits  High efficiency  Excellent ruggedness  Designed for broadband operation  Excellent thermal stability  High power gain  Integrated ESD

文件：1.80472 Mbytes 页数：20 Pages

AMPLEON

安谱隆