Low Pass Filter

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MINI

屏蔽栅金属氧化物半导体场效应管(SGT MOSFETs)

BLP014N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for BMS and high speed switching applications. • Fast Switching\n• Low Gate Charge\n• High avalanche ruggedness\n• RoHS product;

Belling

上海贝岭

屏蔽栅金属氧化物半导体场效应管(SGT MOSFETs)

BLP016N04LC, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology and Cu clip bond Assembly technology, which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high s • Low On-Resistance\n• Low Reverse Transfer Capacitances\n• RoHS Product\n;

Belling

上海贝岭

屏蔽栅金属氧化物半导体场效应管(SGT MOSFETs)

BLP01N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench Ⅱ technology which reduce the conduction loss, and improve switching performance. This is suitable device for BMS and high speed switching applications. • Fast switching\n• Low On-Resistance \n• Low gate charge\n• Low reverse transfer capacitances\n• High avalanche ruggedness\n• RoHS product;

Belling

上海贝岭

Package：SOT-1483-1；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLP0427M9S20GZ/SOT1483/REELDP

Ampleon USA Inc.

Package：SOT-1482-1；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLP0427M9S20Z/SOT1482/REELDP

Ampleon USA Inc.

Package：4-BESOP（0.173"，4.40mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 135V 27DB SOT12242

Ampleon USA Inc.