Power LDMOS transistor

General description A 30 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz. Features and benefits  Designed for broadband operatio

文件：1.25706 Mbytes 页数：14 Pages

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Power LDMOS transistor

General description A 30 W LDMOS driver transistor for broadcast and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications in the frequency range from HF to 2 GHz. Features and benefits  Designed for broadband operatio

文件：1.25706 Mbytes 页数：14 Pages

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Power LDMOS transistor

General description A 160W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Features an

文件：996.89 Kbytes 页数：11 Pages

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Power LDMOS transistor

General description A 100 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 1500 MHz band. Features and benefits  High efficiency  Integrated dual sided ESD protection  Excellent ruggedness  High power gain  Excellent reliability  Easy power con

文件：1.08975 Mbytes 页数：12 Pages

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Power LDMOS transistor

General description A 100 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 1500 MHz band. Features and benefits  High efficiency  Integrated dual sided ESD protection  Excellent ruggedness  High power gain  Excellent reliability  Easy power con

文件：1.06894 Mbytes 页数：12 Pages

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Power LDMOS transistor

General description A 100 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 1500 MHz band. Features and benefits  High efficiency  Integrated dual sided ESD protection  Excellent ruggedness  High power gain  Excellent reliability  Easy power con

文件：1.06894 Mbytes 页数：12 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description A 100 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 1500 MHz band. Features and benefits  High efficiency  Integrated dual sided ESD protection  Excellent ruggedness  High power gain  Excellent reliability  Easy power con

文件：1.06894 Mbytes 页数：12 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description A 100 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 1500 MHz band. Features and benefits  High efficiency  Integrated dual sided ESD protection  Excellent ruggedness  High power gain  Excellent reliability  Easy power con

文件：1.08975 Mbytes 页数：12 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description A 100 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 1500 MHz band. Features and benefits  High efficiency  Integrated dual sided ESD protection  Excellent ruggedness  High power gain  Excellent reliability  Easy power con

文件：1.08975 Mbytes 页数：12 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description A 30 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 2 GHz band. Features and benefits  High efficiency  Integrated dual sided ESD protection  Excellent ruggedness  High power gain  Excellent reliability  Easy power control

文件：1.24717 Mbytes 页数：14 Pages

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