Power LDMOS transistor

General description A 30 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 2 GHz band. Features and benefits  High efficiency  Integrated dual sided ESD protection  Excellent ruggedness  High power gain  Excellent reliability  Easy power control

文件：1.24717 Mbytes 页数：14 Pages

AMPLEON

安谱隆

Power LDMOS transistor

A 30 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 2 GHz band. • High efficiency\n• Excellent ruggedness\n• Excellent reliability\n• For RoHS compliance see the product details on the Ampleon website\n;

Ampleon

安谱隆

Power LDMOS transistor

A 30 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 2 GHz band. • High efficiency\n• Integrated dual sided ESD protection\n• Excellent ruggedness\n• High power gain\n• Excellent reliability\n• Easy power control\n• For RoHS compliance see the product details on the Ampleon website;

Ampleon

安谱隆

Power LDMOS transistor

General description A 30 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 2 GHz band. Features and benefits  High efficiency  Integrated dual sided ESD protection  Excellent ruggedness  High power gain  Excellent reliability  Easy power control

文件：1.24717 Mbytes 页数：14 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description A 30 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 2 GHz band. Features and benefits  High efficiency  Integrated dual sided ESD protection  Excellent ruggedness  High power gain  Excellent reliability  Easy power control

文件：1.24717 Mbytes 页数：14 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description A 30 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 2 GHz band. Features and benefits  High efficiency  Integrated dual sided ESD protection  Excellent ruggedness  High power gain  Excellent reliability  Easy power control

文件：1.24717 Mbytes 页数：14 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description A 30 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 2 GHz band. Features and benefits  High efficiency  Integrated dual sided ESD protection  Excellent ruggedness  High power gain  Excellent reliability  Easy power control

文件：1.24717 Mbytes 页数：14 Pages

AMPLEON

安谱隆

Power LDMOS transistor

A 30 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 2 GHz band. • High efficiency\n• Integrated dual sided ESD protection\n• Excellent ruggedness\n• High power gain\n• Excellent reliability\n• Easy power control\n• For RoHS compliance see the product details on the Ampleon website;

Ampleon

安谱隆

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLP15M9S30G/SOT1483/REELDP

Ampleon USA Inc.

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLP15M9S30/SOT1482/REELDP

Ampleon USA Inc.