BLP15M9S30数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

A 30 W general purpose LDMOS RF power transistor for broadcast and ISM applications in HF to 2 GHz band.

特性 Features

• High efficiency
• Integrated dual sided ESD protection
• Excellent ruggedness
• High power gain
• Excellent reliability
• Easy power control
• For RoHS compliance see the product details on the Ampleon website

应用 Application

• Industrial, scientific and medical applications
• Broadcast transmitter applications
• RF power amplifiers for CW applications

简介

BLP15M9S30属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLP15M9S30晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。