BLP10H6120P数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

A 120 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band

特性 Features

• Easy power control
• Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
• Excellent ruggedness
• High efficiency
• Excellent thermal stability
• Designed for broadband operation (HF to 1000 MHz)
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

应用 Application

• Industrial, scientific and medical applications
• Broadcast transmitter application

简介

BLP10H6120P属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLP10H6120P晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。