Power LDMOS transistor

General description 250 W LDMOS-based power transistor suitable for use in a variety of commercial and consumer cooking, industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz. The BLP2425M10S250P is designed for high-power CW applications and is assembled in

文件：1.00253 Mbytes 页数：11 Pages

AMPLEON

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Broadband LDMOS driver transistor

General description A 5 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  High power gain  Designe

文件：669.34 Kbytes 页数：9 Pages

AMPLEON

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Broadband LDMOS driver transistor

General description A 5 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band. Features and benefits ■ Easy power control ■ Integrated ESD protection ■ Excellent ruggedness ■ High efficiency ■ Excellent thermal stability ■ High power gain ■ Designed

文件：107.73 Kbytes 页数：9 Pages

恩XP

Broadband LDMOS driver transistor

General description A 10 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band. Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband op

文件：671.06 Kbytes 页数：9 Pages

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Power LDMOS transistor

General description 10 W LDMOS power transistor for broadcast and Industrial, Scientific and Medical (ISM) applications at frequencies from HF to 2700 MHz. The BLP27M810 driver is designed for high power CW applications and is assembled in a high performance thermally enhanced plastic package.

文件：1.07729 Mbytes 页数：11 Pages

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BLP3062

BLP3062

文件：80.82 Kbytes 页数：2 Pages

BELLING

上海贝岭

Power LDMOS transistor

General description 5 W LDMOS power transistor for broadcast, ISM and A&D applications at frequencies from HF to 3500 MHz. The BLP35M805 driver is designed for high power CW applications and is assembled in a high performance thermally enhanced plastic package. Features and benefits  High e

文件：1.09916 Mbytes 页数：11 Pages

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BLP4040

BLP4040

文件：75.83 Kbytes 页数：2 Pages

BELLING

上海贝岭

Power LDMOS transistor

General description This 13.6 V 55 W device is designed for land mobile radio (LMR) applications supporting the frequency range from HF up to 520 MHz. Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent re

文件：1.94028 Mbytes 页数：20 Pages

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Power LDMOS transistor

Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent reliability  Wideband  High linearity  For RoHS compliance see the product details on the Ampleon website

文件：1.94065 Mbytes 页数：20 Pages

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