Power LDMOS transistor

Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent reliability  Wideband  High linearity  For RoHS compliance see the product details on the Ampleon website

文件：1.94065 Mbytes 页数：20 Pages

AMPLEON

安谱隆

Power LDMOS transistor

Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent reliability  Wideband  High linearity  For RoHS compliance see the product details on the Ampleon website

文件：1.94065 Mbytes 页数：20 Pages

AMPLEON

安谱隆

Power LDMOS transistor

Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent reliability  Wideband  High linearity  For RoHS compliance see the product details on the Ampleon website

文件：1.94065 Mbytes 页数：20 Pages

AMPLEON

安谱隆

Power LDMOS transistor

This 13.6 V 55 W device is designed for land mobile radio (LMR) applications supporting the frequency range from HF up to 520 MHz. • High efficiency\n• Extreme ruggedness 65 : 1\n• Excellent reliability\n• High linearity\n• For RoHS compliance see the product details on the Ampleon website\n;

Ampleon

安谱隆