Power LDMOS transistor

Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent reliability  Wideband  High linearity  For RoHS compliance see the product details on the Ampleon website

文件：1.94065 Mbytes 页数：20 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description This 13.6 V 55 W device is designed for land mobile radio (LMR) applications supporting the frequency range from HF up to 520 MHz. Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent re

文件：1.94028 Mbytes 页数：20 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description This 13.6 V 55 W device is designed for land mobile radio (LMR) applications supporting the frequency range from HF up to 520 MHz. Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent re

文件：1.94028 Mbytes 页数：20 Pages

AMPLEON

安谱隆

Power LDMOS transistor

General description This 13.6 V 55 W device is designed for land mobile radio (LMR) applications supporting the frequency range from HF up to 520 MHz. Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent re

文件：1.94028 Mbytes 页数：20 Pages

AMPLEON

安谱隆

Power LDMOS transistor

Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent reliability  Wideband  High linearity  For RoHS compliance see the product details on the Ampleon website

文件：1.94065 Mbytes 页数：20 Pages

AMPLEON

安谱隆

Power LDMOS transistor

Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent reliability  Wideband  High linearity  For RoHS compliance see the product details on the Ampleon website

文件：1.94065 Mbytes 页数：20 Pages

AMPLEON

安谱隆