Power LDMOS transistor

General description This 13.6 V 55 W device is designed for land mobile radio (LMR) applications supporting the frequency range from HF up to 520 MHz. Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent re

文件：1.94028 Mbytes 页数：20 Pages

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Package：SOT-1482-1；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：BLP5LA55S/SOT1482/REELDP

Ampleon USA Inc.

Power LDMOS transistor

General description This 13.6 V 55 W device is designed for land mobile radio (LMR) applications supporting the frequency range from HF up to 520 MHz. Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent re

文件：1.94028 Mbytes 页数：20 Pages

AMPLEON

安谱隆

Power LDMOS transistor

Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent reliability  Wideband  High linearity  For RoHS compliance see the product details on the Ampleon website

文件：1.94065 Mbytes 页数：20 Pages

AMPLEON

安谱隆

Power LDMOS transistor

Features and benefits  High efficiency  Integrated dual sided ESD protection  Extreme ruggedness 65 : 1  High power gain  Excellent reliability  Wideband  High linearity  For RoHS compliance see the product details on the Ampleon website

文件：1.94065 Mbytes 页数：20 Pages

AMPLEON

安谱隆