BLF8G22LS-205V数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

205 W LDMOS power transistor with improved video bandwidth for base station applicationsat frequencies from 2100 MHz to 2200 MHz.

特性 Features

Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)

应用 Application

RF power amplifiers for base stations and multi carrier applications in the 2100MHz to 2200 MHz frequency range

简介

BLF8G22LS-205V属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLF8G22LS-205V晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。