首页>BLF8G22LS-205V>规格书详情
BLF8G22LS-205V中文资料Power LDMOS transistor数据手册Ampleon规格书

厂商型号 |
BLF8G22LS-205V |
参数属性 | BLF8G22LS-205V 封装/外壳为SOT-1239B;包装为卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带;类别为分立半导体产品的晶体管-FETMOSFET-射频;产品描述:RF FET LDMOS 65V 18.3DB SOT1239B |
功能描述 | Power LDMOS transistor |
封装外壳 | SOT-1239B |
制造商 | Ampleon Ampleon Netherlands B.V. |
中文名称 | 安谱隆 |
数据手册 | |
更新时间 | 2025-9-23 12:26:00 |
人工找货 | BLF8G22LS-205V价格和库存,欢迎联系客服免费人工找货 |
BLF8G22LS-205V规格书详情
描述 Description
205 W LDMOS power transistor with improved video bandwidth for base station applicationsat frequencies from 2100 MHz to 2200 MHz.
特性 Features
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)
应用 Application
RF power amplifiers for base stations and multi carrier applications in the 2100MHz to 2200 MHz frequency range
技术参数
- 制造商编号
:BLF8G22LS-205V
- 生产厂家
:Ampleon
- GP (dB)
:18.3
- PL(AV) (W)
:50.1
- Die Technology
:LDMOS
- VDS (V)
:28.0
- ηD (%)
:32.5
- PL(1dB) (W)
:205.0
- PL(1dB) (dBm)
:53.1
- Test Signal
:1-c W-CDMA
- Fmin (MHz)
:2100
- Fmax (MHz)
:2200
- Status
:Production
- Matching
:I/O
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
恩XP |
25+ |
SMD |
189 |
原装正品,假一罚十! |
询价 | ||
恩XP |
24+ |
SMD |
5070 |
全新原装,价格优势,原厂原包 |
询价 | ||
恩XP |
2023+ |
SMD |
8635 |
一级代理优势现货,全新正品直营店 |
询价 | ||
AMPLEON |
1906 |
TO-59 |
1600 |
只做原装正品 |
询价 | ||
AMPLEONUS |
23+ |
SOT-1239B |
20000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
恩XP |
23+ |
SMD |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
恩XP |
15+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
恩XP |
2318+ |
原装 |
4862 |
只做进口原装!假一赔百!自己库存价优! |
询价 | ||
恩XP |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
恩XP |
1922+ |
8600 |
莱克讯原厂货源每一片都来自原厂原装现货薄利多 |
询价 |