BLF8G20LS-220中文资料Power LDMOS transistor数据手册Ampleon规格书

描述 Description

220 W LDMOS power transistor for base station applications at frequencies from1800 MHz to 2000 MHz.

特性 Features

Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances(RoHS)

应用 Application

RF power amplifiers for W-CDMA base stations and multi carrier applications in the1800 MHz to 2000 MHz frequency range