BLF8G10LS-160V数据手册RF/IF射频/中频RFID的射频放大器规格书PDF

描述 Description

160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 925 MHz to 960 MHz.

特性 Features

Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (60 MHz typical)
Designed for broadband operation (925 MHz to 960 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

应用 Application

RF power amplifiers for W-CDMA base stations
Multicarrier applications in the 925 MHz to 960 MHz frequency range

简介

BLF8G10LS-160V属于RF/IF射频/中频RFID的射频放大器。由制造生产的BLF8G10LS-160V射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。