BLF882S数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. Theexcellent ruggedness and broadband performance of this device makes it ideal for digitaltransmitter applications.

特性 Features

Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances(RoHS)

应用 Application

Transmitter applications in the HF to 860 MHz frequency range
Industrial applications in the HF to 860 MHz frequency range
Broadcast transmitters

简介

BLF882S属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLF882S晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。