BLF881S数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

特性 Features

Easy power control
Excellent reliability
Integrated ESD protection
High power gain
High efficiency
Excellent ruggedness
Compliant to Directive 2002/95/EC, regarding RoHS

应用 Application

Communication transmitter applications in the UHF band
Industrial applications in the UHF band

简介

BLF881S属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLF881S晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。