BLF7G24LS-100数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

特性 Features

High efficiency
Integrated ESD protection
Low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Excellent ruggedness
Low Rth providing excellent thermal stability
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

应用 Application

RF power amplifiers for base stations
Multicarrier applications in the 2300 MHz to 2400 MHz frequency range

简介

BLF7G24LS-100属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLF7G24LS-100晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。