BLF7G10L-250中文资料Power LDMOS transistor数据手册恩XP规格书

描述 Description

General description
250 W LDMOS power transistor for base station applications at frequencies from 869 MHz to 960 MHz.Features and benefits
■ Excellent ruggedness
■ High efficiency
■ Low Rth providing excellent thermal stability
■ Designed for broadband operation (869 MHz to 960 MHz)
■ Lower output capacitance for improved performance in Doherty applications
■ Designed for low memory effects providing excellent pre-distortability
■ Internally matched for ease of use (input and output)
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)