BLF6G22LS-40P中文资料Power LDMOS transistor数据手册Ampleon规格书

描述 Description

LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz.

特性 Features

Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Integrated ESD protection
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances

应用 Application

RF power amplifiers for base stations
Multi carrier applications in the 2110 MHz to 2170 MHz frequency band
RF driver amplifier in the 1805 MHz to 1880 MHz frequency band