BLF6G38LS-50数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

General description
50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz.Features and benefits
■ Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
   synchronization and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 %
   probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of
   3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a
   power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W:
■ Qualified up to a maximum VDS operation of 32 V
■ Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation
■ Internally matched for ease of use
■ Low gold plating thickness on leads
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)