BLF7G10LS-250数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

250 W LDMOS power transistor for base station applications at frequencies from 920 MHz to 960 MHz.

特性 Features

• Excellent ruggedness
• High efficiency
• Low thermal resistance providing excellent thermal stability
• Designed for broadband operation (869 MHz to 960 MHz)
• Lower output capacitance for improved performance in Doherty applications
• Designed for low memory effects providing excellent pre-distortability
• Internally matched for ease of use (input and output)
• Integrated ESD protection
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

应用 Application

• RF power amplifiers for W-CDMA base stations and multi carrier applications in the 869 MHz to 960 MHz frequency = range

简介

BLF7G10LS-250属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLF7G10LS-250晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。