BLF871数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

特性 Features

■ 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A:
   ♦ Peak envelope power load power = 100 W
   ♦ Power gain = 21 dB
   ♦ Drain efficiency = 47 %
   ♦ Third order intermodulation distortion = −35 dBc
■ DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A:
   ♦ Average output power = 24 W
   ♦ Power gain = 22 dB
   ♦ Drain efficiency = 33 %
   ♦ Third order intermodulation distortion = −34 dBc (4.3 MHz from center frequency)
■ Integrated ESD protection
■ Excellent ruggedness
■ High power gain
■ High efficiency
■ Excellent reliability
■ Easy power control
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)Applications
■ Communication transmitter applications in the UHF band
■ Industrial applications in the UHF band