UHF power LDMOS transistor

Features ■ 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: ♦ Peak envelope power load power = 100 W ♦ Power gain = 21 dB ♦ Drain efficiency = 47 ♦ Third order intermodulation distortion = −35 dBc ■ DVB performance at 8

文件：144.72 Kbytes 页数：18 Pages

恩XP

UHF power LDMOS transistor

■ 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A:\n   ♦ Peak envelope power load power = 100 W\n   ♦ Power gain = 21 dB\n   ♦ Drain efficiency = 47 %\n   ♦ Third order intermodulation distortion = −35 dBc\n■ DVB performance at 858 MHz,;

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

UHF power LDMOS transistor

文件：626.76 Kbytes 页数：19 Pages

PHI

PHI

Package：SOT-467C；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 89V 19DB SOT467C

Ampleon USA Inc.

Package：SOT-467B；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 89V 19DB SOT467B

Ampleon USA Inc.