BLF888AS数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

 

Whitepaper Doherty Architectures in UHF

This White Paper explains different PA architectures which can be used in today’s UHF Broadcast industry. 

In this paper a brief discussion will be given to explain these new Doherty architectures and to help customers finding the best solution for their transmitter. Ampleon’s transistor family BLF8XX can support these Doherty architectures.

Click here to download.

特性 Features

Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
Suitable for CW UHF and ISM applications
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

应用 Application

Communication transmitter applications in the UHF band
Industrial applications in the UHF band

简介

BLF888AS属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLF888AS晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。