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BLF888AS中文资料UHF power LDMOS transistor数据手册Ampleon规格书

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厂商型号

BLF888AS

参数属性

BLF888AS 封装/外壳为SOT-539B;包装为托盘;类别为分立半导体产品的晶体管-FETMOSFET-射频;产品描述:RF FET LDMOS 110V 21DB SOT539B

功能描述

UHF power LDMOS transistor

封装外壳

SOT-539B

制造商

Ampleon Ampleon Netherlands B.V.

中文名称

安谱隆

数据手册

下载地址下载地址二

更新时间

2025-9-23 16:11:00

人工找货

BLF888AS价格和库存,欢迎联系客服免费人工找货

BLF888AS规格书详情

描述 Description

A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

 

Whitepaper Doherty Architectures in UHF

This White Paper explains different PA architectures which can be used in today’s UHF Broadcast industry. 

In this paper a brief discussion will be given to explain these new Doherty architectures and to help customers finding the best solution for their transmitter. Ampleon’s transistor family BLF8XX can support these Doherty architectures.

Click here to download.

特性 Features

Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
Suitable for CW UHF and ISM applications
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

应用 Application

Communication transmitter applications in the UHF band
Industrial applications in the UHF band

技术参数

  • 制造商编号

    :BLF888AS

  • 生产厂家

    :Ampleon

  • GP (dB)

    :20.0

  • PL(AV) (W)

    :110.0

  • Die Technology

    :LDMOS

  • VDS (V)

    :50.0

  • ηD (%)

    :31.0

  • PL(1dB) (W)

    :600.0

  • PL(1dB) (dBm)

    :57.8

  • Test Signal

    :DVB-T (8k OFDM)

  • Fmin (MHz)

    :470

  • Fmax (MHz)

    :860

  • Status

    :Not for design in

  • Matching

    :I

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