BLF8G19LS-170BV数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

170 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 1990 MHz.

特性 Features

Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (100 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Integrated current sense
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

应用 Application

RF power amplifiers for W-CDMA base stations
Multicarrier applications in the 1800 MHz to 1990 MHz frequency range

简介

BLF8G19LS-170BV属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLF8G19LS-170BV晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。