BLF8G19LS-170BV中文资料Power LDMOS transistor数据手册Ampleon规格书

描述 Description

170 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 1990 MHz.

特性 Features

Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (100 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Integrated current sense
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

应用 Application

RF power amplifiers for W-CDMA base stations
Multicarrier applications in the 1800 MHz to 1990 MHz frequency range