BLF8G10LS-300P数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

300 W LDMOS power transistor for base station applications at frequencies from700 MHz to 1000 MHz.

特性 Features

Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

应用 Application

RF power amplifier for multi standards and multi carrier applications in the700 MHz to 1000 MHz frequency range

简介

BLF8G10LS-300P属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLF8G10LS-300P晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。