BLF8G22LS-200V中文资料Power LDMOS transistor数据手册Ampleon规格书

描述 Description

200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.

特性 Features

Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Design optimized for gull-wing

应用 Application

RF power amplifiers for base stations
Multicarrier applications in the 2110 MHz to 2170 MHz frequency range