RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

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Power LDMOS transistor

General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Features and benefits ■ Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a supply voltage of 28 V and an IDq of 390 mA: ◆ Average output power = 2.

文件：328.78 Kbytes 页数：13 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Power LDMOS transistor

General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA: ◆ Average output power = 26.5 W

文件：96.87 Kbytes 页数：10 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Power LDMOS transistor

General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA: ◆ Average output power = 26.5 W

文件：152.49 Kbytes 页数：11 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Power LDMOS transistor

General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Features Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA: Average output power = 32 W

文件：162.86 Kbytes 页数：11 Pages

恩XP

Power LDMOS transistor

General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: ◆ Average output power = 40 W

文件：99.22 Kbytes 页数：11 Pages

恩XP

Power LDMOS transistor

General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: ◆ Average output power = 40 W

文件：98.12 Kbytes 页数：10 Pages

恩XP