Power LDMOS transistor

General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: ◆ Average output power = 40 W

文件：98.12 Kbytes 页数：10 Pages

恩XP

Power LDMOS transistor

General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: ◆ Average output power = 40 W

文件：169.73 Kbytes 页数：11 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Power LDMOS transistor

恩XP

Power LDMOS transistor

200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz Easy power control\nIntegrated ESD protection\nEnhanced ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (700 MHz to 1000 MHz)\nInternally matched for ease of use\nCompliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC;

Ampleon

安谱隆

RF FET LDMOS 65V SOT502B

Ampleon

安谱隆

Package：SOT-502B；包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V SOT539

Ampleon USA Inc.

Package：SOT-502B；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 20DB SOT502B

Ampleon USA Inc.

Package：SOT-502B；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 20DB SOT502B

Ampleon USA Inc.