Axial Lead and Cartridge Fuses - Midget

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LITTELFUSE

力特

Axial Lead and Cartridge Fuses

Axial Lead and Cartridge Fuses Laminated Body Fast-Acting Type BLF Series Fibre Body Fast-Acting Type BLN Series

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LITTELFUSE

力特

BLF Series Fast-acting Midget / 5AG Size Fuse

Description BLF fuses offer safe and reliable protection at a low price for its size, type and features. They are suitable for control circuit and instrument protection in dry (little to no humidity) locations. Specifications Body Material: Fiber Body

文件：845.56 Kbytes 页数：2 Pages

LITTELFUSE

力特

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Broadband power LDMOS transistor

General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Features an

文件：1.3123 Mbytes 页数：12 Pages

AMPLEON

安谱隆

Broadband power LDMOS transistor

General description A 70 W LDMOS RF power transistor for broadcast transmitter, communications and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applicatio

文件：951.92 Kbytes 页数：12 Pages

AMPLEON

安谱隆

Broadband power LDMOS transistor

General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

文件：1.02295 Mbytes 页数：14 Pages

AMPLEON

安谱隆

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Broadband power LDMOS transistor

General description A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

文件：173.12 Kbytes 页数：13 Pages

恩XP

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators

文件：127.7 Kbytes 页数：16 Pages

PHI

PHI