UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting b

文件：52.67 Kbytes 页数：8 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

UHF power LDMOS transistor

General description\n10 W LDMOS power transistor for base station applications at frequencies from HF to 1000 MHz.Features and benefits\n■ Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA\n ♦ Output power = 10 W (PEP)\n ♦ Gain = 18.5 dB\n ♦ Efficiency = 40%\n ♦ dim = -

恩XP

场效应管(MOSFET)

Ampleon

安谱隆

Package：SOT-538A；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 18.5DB SOT538A

Ampleon USA Inc.

Package：SOT-538A；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 18.5DB SOT538A

Ampleon USA Inc.