VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to t

文件：86.02 Kbytes 页数：12 Pages

PHI

PHI

VHF POWER MOSFET

DESCRIPTION: The ASI BLF246 is a vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. FEATURES INCLUDE: • PG = 13 dB Typical at 175 MHz • 30:1 Load VSWR Capability • Omnigold™ metalization system

文件：21.77 Kbytes 页数：1 Pages

ASI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

VHP power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGs) information is provided for matched pair applications. Refer to t

文件：137.39 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

VHF power MOS transistor

文件：75.53 Kbytes 页数：12 Pages

JMNIC

锦美电子

VHP power MOS transistor

NJS

新泽西半导体

VHF POWER MOSFET

ASI Semiconductor

VHF power MOS transistor

恩XP

VHF push-pull power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are isolated from the flange. FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallizati

文件：88.85 Kbytes 页数：16 Pages

PHI

PHI

VHF power MOS transistor

文件：75.53 Kbytes 页数：12 Pages

JMNIC

锦美电子