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BLF573S

HF / VHF power LDMOS transistor

General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Features and benefits ■ Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: ◆ Average o

文件:84.02 Kbytes 页数:14 Pages

恩XP

恩XP

BLF573S

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件:9.37507 Mbytes 页数:130 Pages

恩XP

恩XP

BLF573S

HF / VHF power LDMOS transistor

General description A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Features and benefits  Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA:  Average out

文件:1.21831 Mbytes 页数:16 Pages

Ampleon

安谱隆

BLF573S

HF / VHF power LDMOS transistor

General description\nA 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. ■ Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA:\n   ♦ Average output power = 300 W\n   ♦ Power gain = 26.5 dB\n   ♦ Efficiency = 70 %\n■ Easy power control\n■ Integrated ESD protection\n■ Excellent ruggedness\n■ High efficiency\n■ Excellent therma;

恩XP

恩XP

BLF573S

HF / VHF power LDMOS transistor

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band. Easy power control\nIntegrated ESD protection\nExcellent ruggedness\nHigh efficiency\nExcellent thermal stability\nDesigned for broadband operation (HF and VHF band)\nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances;

Ampleon

安谱隆

BLF573S,112

Package:SOT-502B;包装:散装 类别:分立半导体产品 晶体管 - FET,MOSFET - 射频 描述:RF FET LDMOS 110V 27.2DB SOT502B

Ampleon USA Inc.

Ampleon USA Inc.

技术参数

  • GP (dB):

    27.2

  • Die Technology:

    LDMOS

  • VDS (V):

    50.0

  • ηD (%):

    70.0

  • PL(1dB) (W):

    300.0

  • PL(1dB) (dBm):

    54.8

  • Test Signal:

    CW

  • Fmin (MHz):

    10

  • Fmax (MHz):

    500

  • Status:

    Production

供应商型号品牌批号封装库存备注价格
IXYS/艾赛斯
24+
TO-59
200
价格优势
询价
Ampleon USA Inc.
22+
SOT502B
9000
原厂渠道,现货配单
询价
恩XP
23+
TO-59
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
恩XP
25+
SOT502
188600
全新原厂原装正品现货 欢迎咨询
询价
恩XP
2018+
26976
代理原装现货/特价热卖!
询价
AMPLEON
25+
SOT-502
26
就找我吧!--邀您体验愉快问购元件!
询价
Ampleon
22+
NA
43
加我QQ或微信咨询更多详细信息,
询价
Ampleon USA Inc.
2022+
SOT502B
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
恩XP
23+
7300
专注配单,只做原装进口现货
询价
Ampleon USA Inc.
25+
SOT-502B
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
更多BLF573S供应商 更新时间2025-12-24 8:31:00