Axial Lead and Cartridge Fuses - Midget

文件：78.82 Kbytes 页数：1 Pages

Littelfuse

力特

VHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to t

文件：109.76 Kbytes 页数：16 Pages

PHI

飞利浦

VHF linear push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides

文件：83.58 Kbytes 页数：12 Pages

PHI

飞利浦

VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262A1 balanced flange package, with two ceramic caps. The mounting flange provides th

文件：132.96 Kbytes 页数：16 Pages

PHI

飞利浦

RF POWER VDMOS TRANSISTOR

DESCRIPTION: The ASI BLF368 is a Dual Common Source N-Channel Enhancement Mode VDMOS. designed for RF Applications.

文件：21.59 Kbytes 页数：1 Pages

ASI

Multi-use VHF power LDMOS transistor

General description A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz. Features ■ Typical pulsed performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A: ◆ Load pow

文件：156.83 Kbytes 页数：17 Pages

恩XP

VHF power LDMOS transistor

General description A 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band. Features ■ Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A: ◆ Load power PL = 500

文件：132.63 Kbytes 页数：13 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

POWER MOSFET

DESCRIPTION: The ASI BLF378 is a N-Channel Enhancement-Mode RF Power MOSFET Designed for broadband RF Applications up to 225 MHz. FEATURES INCLUDE: • PG = 14 dB Min. at 225 MHz • 20:1 Load VSWR Capability • Omnigold™ metalization system

文件：22.3 Kbytes 页数：1 Pages

ASI

VHF push-pull power MOS transistor

DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange provides the common source connection for the transistors. FEATURES • High power gain • Easy power contr

文件：134.98 Kbytes 页数：16 Pages

PHI

飞利浦