BLF369中文资料恩XP数据手册PDF规格书

厂商型号	BLF369
功能描述	Multi-use VHF power LDMOS transistor
文件大小	156.83 Kbytes
页面数量	17 页
生产厂商	未知制造商
企业简称	恩XP
中文名称	未知制造商
数据手册	下载地址一下载地址二
更新时间	2025-6-26 22:59:00
人工找货	BLF369价格和库存，欢迎联系客服免费人工找货

General description

A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz.

Features

■ Typical pulsed performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A:

◆ Load power PL = 500 W

◆ Power gain Gp = 19 dB

◆ Drain efficiency ηD = 55

■ Advanced flange material for optimum thermal behavior and reliability

■ Excellent ruggedness

■ High power gain

■ Designed for broadband operation (HF/VHF band)

■ Source on underside eliminates DC isolators, reducing common-mode inductance

■ Easy power control

■ Integrated ESD protection

■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS), using exemption No. 7 of the annex

Applications

■ Pulsed applications up to 500 MHz

■ Communication transmitter applications in the HF/VHF/UHF band under specific conditions

■ Industrial applications up to 500 MHz under special conditions