BLF1043数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

General description
10 W LDMOS power transistor for base station applications at frequencies from HF to 1000 MHz.Features and benefits
■ Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA
 ♦ Output power = 10 W (PEP)
 ♦ Gain = 18.5 dB
 ♦ Efficiency = 40%
 ♦ dim = -31 dBc
■ Easy power control
■ Excellent ruggedness
■ High power gain
■ Excellent thermal stability
■ Designed for broadband operation (HF to 1000 MHz)
■ No internal matching for broadband operation
■ SMD package.

应用 Application

■ RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 800 to 1000 MHz frequency range
■ Broadcast drivers.