BLF0910H9LS600数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz.

The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.

特性 Features

• High efficiency
• Easy power control
• Excellent ruggedness
• Integrated ESD protection
•  Designed for broadband operation (900 MHz to 930 MHz)
• Internally input matched
• Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

应用 Application

• Industrial applications in the 915 MHz ISM band

简介

BLF0910H9LS600属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的BLF0910H9LS600晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。