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AT-310

FixedAttenuators(SMAType)

■Features 1.AbundantVariationsofAttenuators Attenuationamountsareavailableinabundantvariationsfrom0to4dBin0.5dBsteps,from4to10dBin1dBsteps,andin12,13,15,20,26and30dBsothatlevelscanbefinelyadjusted. 2.SMAType Thecouplingportionsareavaila

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

AT310XS

T3/DS3/E3/STS-1TRANSFORMERSEXTENDEDTEMPERATURERANGE

MPSINDMPS Industries, Inc.

美国芯源

ATAVRMC310

8-bitMicrocontrollers

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

ATX-H310A

ATXIndustrialMotherboardwith8th/9thGenerationIntel®Core™Processor,DDR4DRAM,Option:4GLTEFunction

Features ■8th/9thGenerationIntel®Core™LGA1151Processor ■SupportsMax.TDP6Core95W ■DDR42666/2400/2133MHz,max.64GB ■TwoIndependentDisplays:HDMIx1,VGAx1,DPx1 ■DualIntel®GigabitEthernet,i210ATx1,i219Vx1 ■USB3.2Gen1portsx4,USB2.0portsx5 ■M.22280

AAEONAAEON Technology

研扬科技研扬科技(苏州)有限公司

AUSCD310H

SchottkyBarrierDiode

ZOWIEZOWIE

智威智威科技股份有限公司

AVN310N

Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

AZT310HVI

HIGHCURRENTPHASECONTROL

POSEICO

Power Semiconductors

BFG310

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310W

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310W

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features Highpowergain Lownoisefigure Hightransitionfrequency Goldmetallizationensuresexcellentreliability Applications IntendedforRadioFrequency(RF)fro

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG310W-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFG310XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310XR

NPN14GHzwidebandtransistor

Generaldescription NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Rplasticpackage. Features ■Highpowergain ■Lownoisefigure ■Hightransitionfrequency ■Goldmetallizationensuresexcellentreliability Applications ■IntendedforRadioFrequency(RF)fronte

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

BFG310-XR

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

BFU310

N-channelsiliconfield-effecttransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BGA310

SiliconBipolarMMIC-Amplifier(Cascadable50W-gainblock9dBtypicalgainat1.0GHz9dBmtypicalP-1dBat1.0GHz3dB-bandwidth:DCto2.4GHz)

SiliconBipolarMMIC-Amplifier Preliminarydata •Cascadable50Ω-gainblock •9dBtypicalgainat1.0GHz •9dBmtypicalP-1dBat1.0GHz •3dB-bandwidth:DCto2.4GHz

SIEMENSSiemens Ltd

西门子德国西门子股份公司

BPS310

BPS310Series-12mmUncompensatedLowPressureSensor

BournsBourns Inc.

伯恩斯(邦士)

BR310

SinglePhaseGlassPassivatedSiliconBridgeRectifier

GENESIC

GeneSiC Semiconductor, Inc.

BR310

BRIDGERECTIFIERSDIODES

VOLTAGERANGE:50-1000VCURRENT:3.0A Features ●Diffusedjunction ●Highcurrentcapability ●Highcasedielectricstrength ●Highsurgecurrentcapability ●Idealforprintedcircuitboardapplication ●Plasticmaterialhasunderwriterslaboratory flammabilityclassification94V-O

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

BR310

SILICONBRIDGERECTIFIERS

BWTECHBruckewell Technology LTD

布吕克韦尔技术布吕克韦尔技术有限公司

详细参数

  • 型号:

    BFG310W/XR

  • 制造商:

    NXP Semiconductors

  • 功能描述:

    BFG310W/XR NPN 14GHz wideband transistor

供应商型号品牌批号封装库存备注价格
NXPSemiconductors
07+/08+
CMPAK-4
115
询价
NXP
24+
SOT-343
5000
只做原装公司现货
询价
NXP
20+
SOT-343
11520
特价全新原装公司现货
询价
PHILIPS
21+
35200
一级代理/放心采购
询价
NXP
21+
SOT-343
1800
原装现货假一赔十
询价
NXP
21+
SOT-343
1800
只做原装正品,不止网上数量,欢迎电话微信查询!
询价
NXP
22+
SOT-343
32350
原装正品 假一罚十 公司现货
询价
NXP/恩智浦
22+
SOT-343
9000
原装正品
询价
PHILIPS/飞利浦
1535+
12000
询价
NXP/恩智浦
22+
SOT-343
8900
英瑞芯只做原装正品!!!
询价
更多BFG310W/XR供应商 更新时间2024-6-14 16:30:00