丝印：-MT；Package：SOT-143；NPN 2 GHz RF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Co

文件：74.77 Kbytes 页数：10 Pages

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丝印：tMT；Package：SOT-143；UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common

文件：58.4 Kbytes 页数：9 Pages

PHI

飞利浦

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common

文件：58.4 Kbytes 页数：9 Pages

PHI

飞利浦

UHF power transistor

FEATURES  High efficiency  Small size discrete power amplifier  900 MHz and 1.9 GHz operating areas  Gold metallization ensures excellent reliability. APPLICATIONS  Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. DESCRIPTION NPN silicon planar epi

文件：259.829 Kbytes 页数：11 Pages

恩XP

UHF power transistor

FEATURES  High efficiency  Small size discrete power amplifier  900 MHz and 1.9 GHz operating areas  Gold metallization ensures excellent reliability. APPLICATIONS  Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. DESCRIPTION NPN silicon planar epi

文件：259.829 Kbytes 页数：11 Pages

恩XP

丝印：T5；Package：SOT-343；UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common

文件：58.4 Kbytes 页数：9 Pages

PHI

飞利浦

丝印：T5；Package：SOT-343；UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common

文件：58.4 Kbytes 页数：9 Pages

PHI

飞利浦

UHF power transistor

FEATURES  High efficiency  Small size discrete power amplifier  900 MHz and 1.9 GHz operating areas  Gold metallization ensures excellent reliability. APPLICATIONS  Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. DESCRIPTION NPN silicon planar epi

文件：259.829 Kbytes 页数：11 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common

文件：58.4 Kbytes 页数：9 Pages

PHI

飞利浦