丝印：-MT；Package：SOT-143；NPN 2 GHz RF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Co

文件：74.77 Kbytes 页数：10 Pages

PHI

飞利浦

丝印：tMT；Package：SOT-143；UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package. FEATURES • High efficiency • Small size discrete power amplifier • 900 MHz and 1.9 GHz operating areas • Gold metallization ensures excellent reliability. APPLICATIONS • Common

文件：58.4 Kbytes 页数：9 Pages

PHI

飞利浦

丝印：-MT；Package：SOT-143；NPN 2 GHz RF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Co

文件：257.56 Kbytes 页数：11 Pages

恩XP

丝印：tMT；Package：SOT-143；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：tMT；Package：SOT-143；NPN 2 GHz RF power transistor

文件：65.2 Kbytes 页数：10 Pages

恩XP