丝印：-MT；Package：SOT-143；NPN 2 GHz RF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Co

文件：74.77 Kbytes 页数：10 Pages

PHI

PHI

丝印：-MT；Package：SOT-143；NPN 2 GHz RF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Co

文件：257.56 Kbytes 页数：11 Pages

恩XP

丝印：-MT；Package：SOT-143；NPN 2 GHz RF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Co

文件：257.56 Kbytes 页数：11 Pages

恩XP

丝印：-MT；Package：SOT-143；NPN 2 GHz RF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in plastic, 4-pin dual-emitter SOT143 package. FEATURES • High power gain • High efficiency • Small size discrete power amplifier • 1.9 GHz operating area • Gold metallization ensures excellent reliability. APPLICATIONS • Co

文件：74.77 Kbytes 页数：10 Pages

PHI

PHI