BFG10/X

Marking：-MT；Package：SOT-143；NPN 2 GHz RF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Co

BFG10/X

Marking：-MT；Package：SOT-143；NPN 2 GHz RF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package. FEATURES •Highpowergain •Highefficiency •Smallsizediscretepoweramplifier •1.9GHzoperatingarea •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Co

BFG10/X

Marking：tMT；Package：SOT-143；UHF power transistor

DESCRIPTION NPNsiliconplanarepitaxialtransistorencapsulatedinaplastic,4-pindual-emitterSOT343package. FEATURES •Highefficiency •Smallsizediscretepoweramplifier •900MHzand1.9GHzoperatingareas •Goldmetallizationensuresexcellentreliability. APPLICATIONS •Common

BFG10/X

Marking：tMT；Package：SOT-143；RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

BFG10/X

Marking：tMT；Package：SOT-143；NPN 2 GHz RF power transistor

BFG10/X,215

Package：TO-253-4，TO-253AA；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 8V 1.9GHZ SOT143B

NXP USA Inc.