FMMT717

SwitchingTransistor

Features ●625mWpowerdissipation. ●ICCONT2.5A. ●ICupto10Apeakpulsecurrent. ●Excellenthfecharacteristicsupto10A(pulsed). ●Extremelylowsaturationvoltagee.g.10mVtyp.. ●Exhibitsextremelylowequivalenton-resistance;RCE(sat).

FMMT717

SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS

Features •BVCEO>-12V •IC=-2.5AContinuousCollectorCurrent •ICM=-10APeakPulseCurrent •LowSaturationVoltageE.g.-17mVMax@IC=-100mA. •RCE(sat)=72mΩat2.5Aforalowequivalenton-resistance •625mWpowerdissipation •hFEcharacterisedupto-10Aforhighcurrentgai

FMMT717

SILICONPOWER(SWITCHING)TRANSISTORS

FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat)

FMMT717

PNPTransistor

Features ●ForSwitchingandAmplifierApplications. ●ExtremelyLowSaturationVoltage ●ComplementarytoNPNType:FMMT617

FMMT717

SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS

Features •BVCEO>-100V •IC=-1AHighContinuousCollectorCurrent •ICM=-2.5APeakPulseCurrent •LowSaturationVoltageVCE(sat)

FMMT717QTA

12VPNPSILICONLOWSATURATIONTRANSISTORINSOT23

FMMT717TA

12VPNPSILICONLOWSATURATIONTRANSISTORINSOT23

FMMT717TA

SOT23PNPSILICONPOWER(SWITCHING)TRANSISTORS

Features •BVCEO>-100V •IC=-1AHighContinuousCollectorCurrent •ICM=-2.5APeakPulseCurrent •LowSaturationVoltageVCE(sat)

FMMTL717

SOT23PNPSILICONPLANARHIGHGAINMEDIUMPOWERTRANSISTOR

Features •BVCEO>-12V •IC=-1.25AContinuousCollectorCurrent •ICM=-4APeakPulseCurrent •LowSaturationVoltageVCE(sat)

FMMTL717

PNPSILICONPLANARHIGHGAINMEDIUMPOWERTRANSISTOR

FEATURES Verylowequivalenton-resistance;RCE(sat)=160mΩat1.25A