N-channel junction FETs

DESCRIPTION N-channel symmetrical junction field effect transistors in a SOT23 package. FEATURES • High transfer admittance • Low input capacitance • Low feedback capacitance • Low noise. APPLICATIONS • Preamplifiers for AM tuners in car radios.

文件：102.16 Kbytes 页数：12 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N沟道FET

SOT23封装N沟道对称结型场效应晶体管。 高传输导纳\n低反馈容值\n低输入容值\n低噪声;

恩XP

恩智浦

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolator

文件：167.54 Kbytes 页数：12 Pages

PHI

飞利浦

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Designed to withstand abrupt load mismatch

文件：114.8 Kbytes 页数：16 Pages

PHI

飞利浦

UHF POWER LDMOS TRANSISTOR

DESCRIPTION: The ASI BLF861A ia a Silicon N-channel enhancement mode lateral D-MOS push-pull transistor. FEATURES: • Internal input-output matching • Omnigold™ Metalization System

文件：18.26 Kbytes 页数：1 Pages

ASI