UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolator

文件：167.54 Kbytes 页数：12 Pages

PHI

飞利浦

UHF power LDMOS transistor

恩XP

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Designed to withstand abrupt load mismatch

文件：100.39 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

UHF POWER LDMOS TRANSISTOR

DESCRIPTION: The ASI BLF861A ia a Silicon N-channel enhancement mode lateral D-MOS push-pull transistor. FEATURES: • Internal input-output matching • Omnigold™ Metalization System

文件：18.26 Kbytes 页数：1 Pages

ASI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Designed to withstand abrupt load mismatch

文件：114.8 Kbytes 页数：16 Pages

PHI

飞利浦

UHF power LDMOS transistor

文件：120.9 Kbytes 页数：16 Pages

JMNIC

锦美电子

UHF power LDMOS transistor

恩XP

Package：SOT-540A；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET LDMOS 65V 14.5DB SOT540A

Ampleon USA Inc.