N-channel junction FETs

DESCRIPTION N-channel symmetrical junction field effect transistors in a SOT23 package. FEATURES • High transfer admittance • Low input capacitance • Low feedback capacitance • Low noise. APPLICATIONS • Preamplifiers for AM tuners in car radios.

文件：102.16 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel junction FETs

DESCRIPTION\nN-channel symmetrical junction field effect transistors in a SOT23 package.FEATURES\n• High transfer admittance\n• Low input capacitance\n• Low feedback capacitance\n• Low noise.\n\nAPPLICATIONS\n• Preamplifiers for AM tuners in car radios. • High transfer admittance\n• Low feedback capacitance\n• Low noise.;

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N-channel junction FETs

DESCRIPTION N-channel symmetrical junction field effect transistors in a SOT23 package. FEATURES • High transfer admittance • Low input capacitance • Low feedback capacitance • Low noise. APPLICATIONS • Preamplifiers for AM tuners in car radios.

文件：102.16 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel junction FETs

DESCRIPTION N-channel symmetrical junction field effect transistors in a SOT23 package. FEATURES • High transfer admittance • Low input capacitance • Low feedback capacitance • Low noise. APPLICATIONS • Preamplifiers for AM tuners in car radios.

文件：102.16 Kbytes 页数：12 Pages

PHI

飞利浦

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

N-channel junction FETs

DESCRIPTION N-channel symmetrical junction field effect transistors in a SOT23 package. FEATURES • High transfer admittance • Low input capacitance • Low feedback capacitance • Low noise. APPLICATIONS • Preamplifiers for AM tuners in car radios.

文件：102.16 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel junction FETs

文件：91.09 Kbytes 页数：12 Pages

JMNIC

锦美电子

N-channel junction FETs

文件：91.09 Kbytes 页数：12 Pages

JMNIC

锦美电子