丝印：BD135；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

文件：1.68264 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD135；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

文件：1.68264 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD135；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

文件：1.68264 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：BD135；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

文件：1.68264 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

SILICON NPN EPITAXIAL TYPE

FEATURES: . Designed for Complementary Use with BD136, BD138 and BD140.

文件：214.66 Kbytes 页数：3 Pages

TOSHIBA

东芝

NPN Plastic Encapsulated Transistor

FEATURES High current Complement to BD136, BD138 and BD140

文件：185.8 Kbytes 页数：2 Pages

SY

顺烨电子

Complementary low voltage transistor

Features ■ Products are pre-selected in DC current gain Application ■ General purpose Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.

文件：148.83 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

High Current

TRANSISTOR (NPN) FEATURES • High Current(1.5A) • Low Voltage(80V)

文件：360.44 Kbytes 页数：2 Pages

DGNJDZ

南晶电子

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Current ● Complement To BD136, BD138 And BD140

文件：1.10211 Mbytes 页数：4 Pages

JIANGSU

长电科技

SILICON PLANAR EPITAXIAL POWER TRANSISTORS

SILICON PLANAR EPITAXIAL POWER TRANSISTORS. The BD136-BD138-BD140 are PNP Transistors They are recommended for driver stages in hi-fi amplifiers and television circuits. They are mounted in Jedec TO-126 plastic package. NPN complements are BD135-BD137-BD139. Compliance to RoHS.

文件：73.91 Kbytes 页数：3 Pages

COMSET