丝印：BD034；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Transition Frequency High Collector Current

文件：996.48 Kbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：BD034；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Transition Frequency High Collector Current

文件：996.48 Kbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：BD034；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Transition Frequency High Collector Current

文件：996.48 Kbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：BD034；Package：TO-126；TO-126 Plastic-Encapsulate Transistors

FEATURES High Transition Frequency High Collector Current

文件：996.48 Kbytes 页数：3 Pages

DGNJDZ

南晶电子

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: -2.5 A Collector-base voltage V(BR)CBO: -110 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：96.15 Kbytes 页数：2 Pages

JIANGSU

长电科技

BD034

FEATURES ● High Current ● High Transition Frequency

文件：80.05 Kbytes 页数：1 Pages

SECOS

喜可士

Silicon PNP transistor in a TO-126F Plastic Package.

Descriptions Silicon PNP transistor in a TO-126F Plastic Package. Features High VCEO, large IC. Applications Medium power applications.

文件：866.9 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon PNP transistor in a TO-92LM Plastic Package.

Descriptions Silicon PNP transistor in a TO-92LM Plastic Package. Features High Collector current, high Collector-base voltage. Applications Power dissipation.

文件：747.28 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

BD034

FEATURES ● High Current ● High Transition Frequency

文件：80.05 Kbytes 页数：1 Pages

SECOS

喜可士

BD034

FEATURES ● High Current ● High Transition Frequency

文件：80.05 Kbytes 页数：1 Pages

SECOS

喜可士