Plastic-Encapsulate Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

文件：720.99 Kbytes 页数：4 Pages

HOTTECH

合科泰

NPN Silicon AF Transistors

FEATURES ● For AF driver and output stages ● High collector current ● Low collector-emitter saturation voltage ● Complementary types:BCX51…BCX53(PNP)

文件：474.43 Kbytes 页数：5 Pages

BWTECH

NPN Switching Transistor

Features ® For AF driver and output stages ® High collector current ® Low collector-emitter saturation voltage ® Complementary types: TPBCX51/TPBCX52/TPBCX53.

文件：8.18349 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

80 V, 1 A NPN medium power transistors

General description NPN medium power transistor series. Features ■ High current ■ Two current gain selections ■ High power dissipation capability Applications ■ Linear voltage regulators ■ Low-side switches ■ MOSFET drivers ■ Amplifiers

文件：161.15 Kbytes 页数：15 Pages

恩XP

NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard  PNP comple

文件：383.65 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：811D；Package：SOT-89；NPN Low Vce(sat) Transistor

Features  Silicon NPN epitaxial type  Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA  High collector current capability  Excellent DC current gain characteristics  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC61249 Standard  PNP comple

文件：383.65 Kbytes 页数：6 Pages

PANJIT

強茂

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

文件：17.4 Kbytes 页数：1 Pages

ZETEX

80V NPN MEDIUM POWER TRANSISTORS IN SOT89

Features BVCEO > 80V Ic = 1A High Continuous Collector Current ICM = 2.0A Peak Pulse Current Low Saturation Voltage VCE(sat)

文件：426.26 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：BL；Package：SC-62；80 V, 1 A NPN medium power transistors

1. General description NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package 2. Features and benefits • High collector current capability IC and ICM • Three current gain selections • High power dissipation capability • Qualified according t

文件：239.72 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：BL；Package：SOT89；80V NPN MEDIUM POWER TRANSISTORS IN SOT89

Features BVCEO > 80V Ic = 1A High Continuous Collector Current ICM = 2.0A Peak Pulse Current Low Saturation Voltage VCE(sat)

文件：426.26 Kbytes 页数：7 Pages

DIODES

美台半导体