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BCX56-16-AU_R1_000A1

Marking:811D;Package:SOT-89;NPN Low Vce(sat) Transistor

Features SiliconNPNepitaxialtype LowVce(sat)0.35V(max)@Ic/Ib=500mA/50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard PNPcomple

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PBHV8110DH_R1_00001

Marking:811D;Package:SOT-89;NPN Low Vce(sat) Transistor

Features SiliconNPNepitaxialtype LowVce(sat)0.35V(max)@Ic/Ib=500mA/50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard PNPcomplement:PBHV9110DH

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PBHV8110DH-AU_R1_000A1

Marking:811D;Package:SOT-89;NPN Low Vce(sat) Transistor

Features SiliconNPNepitaxialtype LowVce(sat)0.35V(max)@Ic/Ib=500mA/50mA Highcollectorcurrentcapability ExcellentDCcurrentgaincharacteristics AEC-Q101qualified LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard PNPcomple

PANJITPan Jit International Inc.

強茂強茂股份有限公司

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